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  Datasheet File OCR Text:
 CRS09
Toshiba Schottky Barrier Rectifier Schottky Barrier Type
CRS09
Switching Type Power Supply Applications Portable Equipment Battery Applications
* * * *
Forward voltage: VFM = 0.46 V (max) Average forward current: IF (AV) = 1.5 A Repetitive peak reverse voltage: VRRM = 30 V Small package: "S-FLATTM" (Toshiba designation)
Maximum Ratings (Ta = 25C)
Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Storage temperature Symbol VRRM IF (AV) IFSM Tj Tstg Rating 30 1.5 30 (50 Hz) -40~150 -40~150 Unit V A A C C
Electrical Characteristics (Ta = 25C)
Characteristics Symbol VFM (1) Peak forward voltage VFM (2) VFM (3) Repetitive peak reverse current Junction capacitance IRRM (1) IRRM (2) Cj Test Condition IFM = 0.1 A IFM = 1.0 A IFM = 1.5 A VRRM = 5 V VRRM = 30 V VR = 10 V, f = 1.0 MHz On ceramic substrate Thermal resistance Rth (j-a) (soldering land 2 mm x 2 mm) On glass-epoxy substrate (soldering land 6 mm x 6 mm) Min Typ. 0.35 0.415 0.43 0.8 10 90 Max 0.46 50 70 C/W 140 A pF V Unit
961001EAA1
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
2000-03-07
1/4
CRS09
Marking Following Indicates the Date of Manufacture
Type code Lot No. 0 1 2 3 4
S9
Month (starting from Alphabet A)
5
6
7
8
9
Year (last decimal digit of the current year) Cathode mark
Standard Soldering Pad
Unit: mm 1.2 1.2 2.8
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and not proper operating temperature or voltage may cause thermal run. Please take forward and reverse loss into consideration when you design.
2000-03-07
2/4
CRS09
IF - VF (A)
10 1000
Cj - VR
(typ.)
f = 1 MHz Ta = 25C
IF
Instantaneous forward current
Tj = 150C 1 125C 75C 0.3 25C
(pF) Junction capacitance
0.6 0.7 0.8
3
500 300
Cj
100 50 30 0.3 0.4 0.5
0.1
0.03
0.01 0
0.1
0.2
Instantaneous forward voltage VF
(V)
10 1
3
5
10
30
50
100
Reverse voltage VR
(V)
Ta MAX - IF (AV)
160 140 0.8
PF (AV) - IF (AV) Average forward power dissipation
Rectangular waveform
0.7 0.6
Maximum allowable temperature Ta MAX (C)
120 100 80 60 40 0 20 0 0 180 360 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Rectangular waveform
0
PF (AV) (W)
0.5 0.4 0.3 0.2 0.1 0 0
180 360
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Average forward current IF (AV) (A)
Average forward current IF (AV) (A)
rth (j-a) - t
30000 On ceramic substrate: 10000 soldering land 2 mm x 2 mm On glass epoxy substrate: soldering land 6 mm x 6 mm 1000 40
Surge forward current (non-repetitive)
Peak surge forward current IFSM (A)
Ta = 25C f = 50 Hz Half sine waveform 30
Transient thermal impedance rth (j-a) (C/W)
20
100
10
10
1 1
10
100
1000
10000
100000
0 1
3
5
10
30
50
100
time t (ms)
Number of cycles
2000-03-07
3/4
CRS09
IR - Tj
100 Pulse measurement
(typ.)
0.8
PR (AV) - VR Average reverse power dissipation
Rectangular waveform 360
(typ.)
Repetitive peak reverse current
0.7 0 0.6
10 VR = 30 V 1
PR (AV) (W)
VR 0.5 0.4 0.3 60 0.2 0.1 0 0 Conduction angle Tj = 150C 300 240 180 120
DC
(mA)
0.1
20 V 10 V
IR
0.01 5V 3V 0.001 0.0001 0
20
40
60
80
100
120
140
160
4
8
12
16
20
24
28
Junction temperature Tj
(C)
Reverse voltage VR
(V)
2000-03-07
4/4


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